document number: 94338 for tec hnical questions, contact: diodestech@vishay.com www.vishay.com revision: 08-apr-10 1 input rectifier diode, 10 a vs-10ets..spbf high voltage series vishay high power products description/features the vs-10ets..spbf rectifier series has been optimized for very low forward voltage drop, with moderate leakage. the glass passivation technology used has reliable operation up to 150 c junction temperature. typical applications are in input rectification and these products are designed to be used with vishay hpp switches and output rectifiers which are available in identical package outlines. ? meets msl level 1, per j-std-020, lf maximum peak of 260 c ? compliant to rohs directive 2002/95/ec ? halogen-free according to iec 61249-2-21 definition ? designed and qualified for industrial level product summary v f at 10 a < 1 v i fsm 200 a v rrm 800 v/1200 v d 2 pak 2 13 base cathode anode anode output current in typical applications applications single-phase bridge three-phase bridge units capacitive input filter t a = 55 c, t j = 125 c common heatsink of 1 c/w 12.0 16.0 a major ratings and characteristics symbol characteristics values units i f(av) sinusoidal waveform 10 a v rrm 800/1200 v i fsm 200 a v f 10 a, t j = 25 c 1.1 v t j - 40 to 150 c voltage ratings part number v rrm , maximum peak reverse voltage v v rsm , maximum non-repetitive peak reverse voltage v i rrm at 150 c ma vs-10ets08spbf 800 900 0.5 vs-10ets10spbf 1000 1100 vs-10ets12spbf 1200 1300 absolute maximum ratings parameter symbol test conditions values units maximum average forward current i f(av) t c = 105 c, 180 conduction half sine wave 10 a maximum peak one cycle non-repetitive surge current i fsm 10 ms sine pulse, rated v rrm applied 170 10 ms sine pulse, no voltage reapplied 200 maximum i 2 t for fusing i 2 t 10 ms sine pulse, rated v rrm applied 130 a 2 s 10 ms sine pulse, no voltage reapplied 145 maximum i 2 t for fusing i 2 t t = 0.1 ms to 10 ms, no voltage reapplied 1450 a 2 s
www.vishay.com for technical questions, contact: diodestech@vishay.com document number: 94338 2 revision: 08-apr-10 vs-10ets..spbf high voltage series vishay high power products input rectifier diode, 10 a note (1) when mounted on 1" square (650 mm 2 ) pcb of fr-4 or g-10 material 4 oz. (140 m) copper 40 c/w for recommended footprint and soldering techniques refer to application note #an-994 electrical specifications parameter symbol test conditions values units maximum forward voltage drop v fm 10 a, t j = 25 c 1.1 v forward slope resistance r t t j = 150 c 20 m threshold voltage v f(to) 0.82 v maximum reverse leakage current i rm t j = 25 c v r = rated v rrm 0.05 ma t j = 150 c 0.50 thermal - mechanical specifications parameter symbol test conditions values units maximum junction and st orage temperature range t j , t stg - 40 to 150 c maximum thermal resistance, junction to case r thjc dc operation 2.5 c/w maximum thermal resistance, junction to ambient (pcb mount) r thja (1) 62 soldering temperature t s 240 c approximate weight 2g 0.07 oz. marking device case style d 2 pak (smd-220) 10ets08s 10ets10s 10ets12s
document number: 94338 for tec hnical questions, contact: diodestech@vishay.com www.vishay.com revision: 08-apr-10 3 vs-10ets..spbf high voltage series input rectifier diode, 10 a vishay high power products fig. 1 - current rating characteristics fig. 2 - current rating characteristics fig. 3 - forward power loss characteristics fig. 4 - forward power loss characteristics fig. 5 - maximum non-re petitive surge current fig. 6 - maximum non-re petitive surge current 80 90 100 110 120 130 140 150 maximum allowable case temperature (c) average forward current (a) 246810 12 0 30 60 90 120 180 10ets.. series r thjc (dc) = 2.5 c/w conduction angle ? 100 110 120 130 140 150 90 maximum allowable case temperature (c) average forward current (a) 16 14 12 10 18 02468 dc 30 60 90 120 180 10ets.. series r thjc (dc) = 2.5 c/w ? conduction period 0 2 4 6 8 10 12 14 16 maximum average forward power loss (w) average forward current (a) 10 8 6 4 2 0 rms limit 180 120 90 60 30 10ets.. series t j = 150 c conduction angle ? 2 0 4 6 8 10 12 14 16 18 20 2468 12 10 14 16 0 dc 180 120 90 60 30 rms limit 10ets.. series t j = 150 c ? conduction period maximum average forward power loss (w) average forward current (a) 160 180 200 140 120 100 80 40 60 peak half sine wave forward current (a) number of equal amplitude half cycle current pulses (n) 10 100 1 at 60 hz 0.0083 s at 50 hz 0.0100 s 10ets.. series at any rated load condition and with rated v rrm applied following surge. initial t j = 150 c 140 160 180 200 220 240 120 100 80 60 40 pulse train duration (s) 0.1 1.0 0.01 peak half sine wave forward current (a) 10ets.. series versus pulse train duration. maximum non-repetitive surge current initial t j = 150 c no voltage reapplied rated v rrm reapplied
www.vishay.com for technical questions, contact: diodestech@vishay.com document number: 94338 4 revision: 08-apr-10 vs-10ets..spbf high voltage series vishay high power products input rectifier diode, 10 a fig. 7 - forward voltage drop characteristics fig. 8 - thermal impedance z thjc characteristics 1 100 10 instantaneous forward current (a) instantaneous forward voltage (v) 0.5 1.0 1.5 2.0 2.5 3.0 0 t j = 25 c t j = 150 c 10ets.. series 0.1 1 10 0.0001 0.001 0.01 0.1 1 square wave pulse duration (s) z thjc - transient thermal impedance (c/w) 10 d = 0.50 d = 0.33 d = 0.25 d = 0.17 d = 0.08 steady state value (dc operation) 10ets.. series single pulse
document number: 94338 for tec hnical questions, contact: diodestech@vishay.com www.vishay.com revision: 08-apr-10 5 vs-10ets..spbf high voltage series input rectifier diode, 10 a vishay high power products ordering information table 2 - current rating (10 = 10 a) 3 - circuit configuration: e = single diode 4 - package: t = to-220ac 5 - type of silicon: s = standard recovery rectifier 6 - voltage code x 100 = v rrm 7 - s = to-220 d 2 pak (smd-220) version 8 - none = tube trl = tape and reel (left oriented) trr = tape and reel (right oriented) 9 - pbf = lead (pb)-free 08 = 800 v 10 = 1000 v 12 = 1200 v 1 - hpp product suffix device code 5 1 3 24 6789 vs- 10 e t s 12 s trl pbf links to related documents dimensions www.vishay.com/doc?95046 part marking information www.vishay.com/doc?95054 packaging information www.vishay.com/doc?95032
document number: 95046 for technical questions within your region, please contact one of the following: www.vishay.com revision: 31-mar-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 d 2 pak outline dimensions vishay semiconductors dimensions in millimeters and inches notes (1) dimensioning and toleranc ing per asme y14.5 m-1994 (2) dimension d and e do not include mold flash. mold flash sh all not exceed 0.127 mm (0.005") per side. these dimens ions are measu red at the outmost extremes of the plastic body (3) thermal pad contour optional with in dimension e, l1, d1 and e1 (4) dimension b1 and c1 a pply to base metal only (5) datum a and b to be determined at datum plane h (6) controlling dimension: inch (7) outline conforms to jedec outline to-263ab symbol millimeters inches notes symbol millimeters inches notes min. max. min. max. min. max. min. max. a 4.06 4.83 0.160 0.190 d1 6.86 8.00 0.270 0.315 3 a1 0.00 0.254 0.000 0.010 e 9.65 10.67 0.380 0.420 2, 3 b 0.51 0.99 0.020 0.039 e1 7.90 8.80 0.311 0.346 3 b1 0.51 0.89 0.020 0.035 4 e 2.54 bsc 0.100 bsc b2 1.14 1.78 0.045 0.070 h 14.61 15.88 0.575 0.625 b3 1.14 1.73 0.045 0.068 4 l 1.78 2.79 0.070 0.110 c 0.38 0.74 0.015 0.029 l1 - 1.65 - 0.066 3 c1 0.38 0.58 0.015 0.023 4 l2 1.27 1.78 0.050 0.070 c2 1.14 1.65 0.045 0.065 l3 0.25 bsc 0.010 bsc d 8.51 9.65 0.335 0.380 2 l4 4.78 5.28 0.188 0.208 c b detail a c2 a a a 0.004 b m a lead tip (3) (3) view a - a (e) (d1) e1 b h a1 detail ?a? rotated 90 cw scale: 8 :1 l gauge plane 0 to 8 l3 l4 seating plane section b - b and c - c scale: none (4) (4) ( b , b 2) b 1, b 3 (c) c1 base metal plating conforms to jedec outline d 2 pak (smd-220) 13 2 d c a l2 e (2)(3) (2) 4 h bb 2 x b 2 x b 2 l1 0.010 a b mm (3) e 2 x pad layout min. 11.00 (0.43) min. 9.65 (0.3 8 ) min. 3. 8 1 (0.15) min. 2.32 (0.0 8 ) 17.90 (0.70) 15.00 (0.625) 2.64 (0.103) 2.41 (0.096) lead assignments diodes 1. - anode (two die)/open (one die) 2., 4. - cathode 3. - anode
document number: 91 000 www.vishay.com revision: 11-mar-11 1 disclaimer legal disclaimer notice vishay all product, product specifications and data ar e subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicab le law, vishay disc laims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, incl uding without limitation specia l, consequential or incidental dama ges, and (iii) any and all impl ied warranties, including warran ties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of pro ducts for certain types of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in gene ric applications. such statements are not binding statements about the suitability of products for a partic ular application. it is the customers responsibility to validate that a particu lar product with the properties described in th e product specification is su itable for use in a particul ar application. parameters provided in datasheets an d/or specifications may vary in different applications and perfo rmance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product co uld result in person al injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk and agr ee to fully indemnify and hold vishay and it s distributors harmless from and against an y and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that vis hay or its distributor was negligent regarding the design or manufact ure of the part. please contact authorized vishay personnel t o obtain written terms and conditions regarding products designed fo r such applications. no license, express or implied, by estoppel or otherwise, to any intelle ctual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners.
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